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The China RRAM International Workshop launches its first edition on June 12th-14th of 2017 at Soochow University, with the objective of becoming the major forum in China for discussion on resistive random access memories and related applications. Topics of interest include ReRAM, CBRAM, 2D materials in RRAM, novel in-situ characterization methods, and RRAM based neuromorphic computing.

Time to workshop

Selected speakers from top universities and companies all around the world will present their premium advances in the field of RRAM. The workshop will host several invited talks (30 minutes) and regular talks (15 minutes). A poster session will be also organized to promote discussion; master and PhD students are specially encouraged to submit their work. Selected contributions will be published as special issue in Crystal Research & Technology (Wiley-VCH). Publishing opportunities for RRAM research will be also discussed by Dr. Hakim Meskine.


H.-S. Philip Wong

Stanford University, USA

Resistive Switching Memory.
Computer architecture is going to change in the coming decade because today’s architecture has severe limitations in energy efficiency and latency for memory access [1].The adoption of Flash in the memory hierarchy (albeit ...
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Paul C. McIntyre

Stanford University, USA

Probing Local Oxygen Deficiency and Resistance Switching Phenomena in Amorphous Titanium Oxide Films using Liquid Electrolyte Contacts.
Replacing the metal top electrode of a RRAM device with a liquid electrolyte contact is a useful approach to...
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Wei Lu

University of Michigan, USA

Memory and Computing Systems Based on Resistive Switching Devices: Merging Electronics with Ionics.
Exponential growth of the semiconductor industry, historically driven by transistor scaling, is now facing fundamental challenges. RRAM, with naturally merges electronics with ionics, offers potential for future memory and co...
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Mario Lanza

Soochow University, China

Hexagonal Boron Nitride Based RRAM.
In this seminar I will present our recent progress on 2D (layered) insulators, with special emphasis on hexagonal boron nitride (h-BN). By combining device level and nanoscale experiments with theoretical modeling we...
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Deji Akinwande

University of Texas @ Austin, USA

Monolayer Non-volatile Devices.
This talk will focus on emerging atomic materials, notably, non-volatile phenomena in the monolayer limit of layered materials including transitional metal dichalcogenides and hexagonal boron nitride. The unexpected observati...
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