Program

8:00-8:50
Registration

8:50-9:00
Opening: Welcome Message
Mario Lanza (Soochow University)

9:00-9:30
Invited talk: Resistive Switching Memory
H.-S. Philip Wong (Stanford University)

9:30-10:00
Invited talk: Publishing with Wiley: A Journey through Scientific Writing and Peer-Review
Hakim Meskine (Wiley-VCH)

10:00-10:30
Coffee/Tea Break

Session I: Advanced characterization
Chair: Yuchao Yang (Peking University)

10:30-11:00
Invited talk: Probing Local Oxygen Deficiency and Resistance Switching Phenomena in Amorphous Titanium Oxide Films using Liquid Electrolyte Contacts
Paul C. McIntyre (Stanford University)

11:00-11:30
Invited talk: Latest Development of Study of Switching Mechanisms in RRAM Using STM/AFM and In-Situ TEM Analysis
Kin Leong Pey (Singapore University of Technology & Design)

11:30-12:00
Invited talk: Intrinsic Bulk Resistance Switching in Silicon Oxide
Anthony Kenyon (University College London)

12:00-12:15
Regular talk: Resistive Switching Characteristics and Mechanisms in Silicon Oxide and Silicon Nitride Memristors
Sungjun Kim (Seoul National University)

12:15-14:00
Lunch Break

Session II: Neuromorphic systems
Chair: Francesco Puglisi (University of Modena and Reggio Emilia)

14:00-14:30
Invited talk: RRAM based Neuromorphic Computing: Challenges and Demonstrations
Huaqiang Wu (Tsinghua University)

14:30-15:00
Invited talk: ReRAM-Based Analog Synapse Devices for Neuromorphic System
Hyunsang Hwang (Pohang University of Science & Technology)

15:00-15:30
Invited talk: RRAM-based Computing Paradigm and Applications for IOT
Jinfeng Kang (Peking University)

15:30-15:45
Regular talk: Integrated HfO₂ RRAM Arrays: Crystallinity and Residual Carbon Impacts
Gang Niu (Xian Jiaotong Universsity (IHP/UAB))

15:45-16:15
Coffee/Tea Break

Session III: Ionic movement
Chair: Shibing Long (IMECAS)

16:15-16:45
Invited talk: Memory and Computing Systems Based on Resistive Switching Devices: Merging Electronics with Ionics
Wei Lu (The University of Michigan)

16:45-17:15
Invited talk: Ion Transport in Memristive Oxides and Its Computing Applications
Yuchao Yang (Peking University)

17:15-17:45
Invited talk: Fabrication of Artificial Nanostructures in Oxide Films by Electric Field and Resistive Switching Effects
Runwei Li (NIMTE (Ningbo))

17:45-18:00
Regular talk: Conductance Tomography of Intrinsic SiO_x RRAM Devices
Mark Buckwell (University College London)

18:00-20:30
Posters Session (Cocktail dinner will be served)

Tuesday, June 13th

8:00-8:45
Registration

Session IV: Simulation and Modeling
Chair: Raghavan Nagarajan (Singapore University of Technology & Design)

8:45-9:15
Invited talk: Time-Dependent Clustering Model for Dielectric Breakdown and RRAM Applications
Ernest Wu (IBM)

9:15-9:30
Regular talk: Dynamic Analysis on Three-Stage Evolution in SET Switching Process of RRAM Devices
Yu Li (IMECAS)

9:30-10:00
Invited talk: A Multiscale Modeling Platform for Engineering RRAM Devices and Materials
Luca Larcher (University of Modena and Reggio Emilia )

10:00-10:15
Regular talk: SIM²RRAM: New Physical Model and Simulator for Resistive RAM
Marco A. Villena (Soochow University)

10:15-10:45
Coffee/Tea Break

Session V: 2D materials in RRAMs
Chair: Felix Palumbo (National Scientific and Technical Research Council of Argentina)

10:45-11:15
Invited talk: Reliability Issues on Oxide-Based RRAM
Ming Liu (IMECAS)

11:15-11:45
Invited talk: Monolayer Non-Volatile Devices
Deji Akinwande (The University of Texas at Austin)

11:45-12:15
Invited talk: Resistive switching in multilayer h-BN: a novel mechanism
Mario Lanza (Soochow University)

12:15-12:30
Regular talk: Multilayer h-BN for Multilevel RRAMs
Yuanyuan Shi (Soochow University)

12:30-14:15
Lunch Break

Session VI: Device technology
Chair: Ernest Wu (IBM)

14:15-14:45
Invited talk: Non-Volatile Resistive Memory: a Quest From Material Development Towards the Memory of the Future
Gabriele Navarro (CEA LETI)

14:45-15:30
Invited talk: Volume Resistive Switching in Perovskite Oxides
Jordi Suñe (Universitat Autonoma de Barcelona)

15:30-15:45
Regular talk: Fabrication of Nano-cone RRAM and Analysis of its Electrical Concentration Effect
Tae-Hyeon Kim (Seoul National University)

15:45-16:15
Coffee/Tea Break

Session VII: Charge trapping in RRAM
Chair: Mario Lanza (Soochow University)

16:15-16:45
Invited talk: Characterization of Non-Filamentary Amorphous-Si/TiO₂ (a-VMCO) RRAM Device
Weidong Zhang (Liverpool John Moores University)

16:45-17:00
Regular talk: Fully Analog ALD-Grown Memristor Utilizing Charge-Trapping Resistive Switching
Boris Hudec (National Chiao-Tung University)

17:00-17:30
Invited talk: The ‘Value Chain’ of Random Telegraph Noise in RRAM Devices
Francesco Puglisi (University of Modena and Reggio Emilia)

17:30- 21:00
Gala dinner by the lake