Speakers

Biography

H.-S. Philip Wong is the Willard R. and Inez Kerr Bell Professor in the School of Engineering. He joined Stanford University as Professor of Electrical Engineering in September, 2004. From 1988 to 2004, he was with the IBM T.J. Watson Research Center. At IBM, he held various positions from Research Staff Member to Manager and Senior Manager. While he was Senior Manager, he had the responsibility of shaping and executing IBM’s strategy on nanoscale science and technology as well as exploratory silicon devices and semiconductor technology. Professor Wong’s research aims at translating discoveries in science into practical technologies. His works have contributed to advancements in nanoscale science and technology, semiconductor technology, solid-state devices, and electronic imaging. He is a Fellow of the IEEE. He served as the Editor-in-Chief of the IEEE Transactions on Nanotechnology in 2005 – 2006, sub-committee Chair of the ISSCC (2003 – 2004), General Chair of the IEDM (2007), and is currently the Chair of the IEEE Executive Committee of the Symposia of VLSI Technology and Circuits. He is the founding Faculty Co-Director of the Stanford SystemX Alliance – an industrial affiliate program focused on building systems.

Biography

Ming Liu received the B.S. and M.S. degrees in semiconductor physics and device from Hefei Polytechnic University, Hefei, China, in 1985 and 1988, respectively, and the Ph.D. degree in microelectronics from Beijing University of Aeronautics and Astronauts, China, in 1998. From 1998 to 1999, she was a Postdoctoral Scholar in the Chinese Academy of Sciences (CAS). She joined the Institute of Microelectronics, CAS, in 2000. She is currently the Director of the Key Laboratory of Nanofabrication and Novel Devices Integration Technology and the Key Laboratory of Microelectronics Devices and Integrated Technology. In 2015, she was selected as an Academician of Chinese Academy of Sciences. Her research interests are non-volatile memory, from materials, structure, processing, model and design; nanofabrication, molecular electronics.

Biography

Paul McIntyre is Rick and Melinda Reed Professor in the School of Engineering, Department Chair of Materials Science and Engineering and Senior Fellow of the Precourt Institute for Energy at Stanford University. McIntyre leads a research team of approximately twelve graduate students, post-doctoral researchers, visiting scientists and consulting professors who perform basic research on nanostructured inorganic materials for applications in electronics and energy technologies. He is best known for his work on metal oxide/semiconductor interfaces, ultrathin metal oxide films, atomic layer deposition, and semiconductor nanowires. His research team synthesizes materials, characterizes their structures and compositions with a variety of advanced microscopies and spectroscopies, studies the passivation of their interfaces, and measures functional properties of devices. Their research is supported by several U.S. government agencies and major semiconductor manufacturers world-wide. McIntyre is an author of ~200 archival journal papers and inventor of 8 US patents, and has given over 100 invited presentations, plenary talks and tutorial lectures. He has received two IBM Faculty Awards, a Charles Lee Powell Foundation Faculty Scholarship and an SRC Inventor Recognition award. McIntyre was a GCEP Distinguished Lecturer in 2010 and received the Woody White Award of the Materials Research Society in 2011.

Biography

Wei Lu is an associate professor at the Electrical Engineering and Computer Science Department at the University of Michigan – Ann Arbor, and co-founder and Chief Scientist of Crossbar Inc. He received B.S. degree in physics from Tsinghua University, Beijing, China, in 1996, and Ph.D. in physics from Rice University, Houston, TX in 2003. From 2003 to 2005, he was a postdoctoral research fellow at Harvard University, Cambridge, Massachusetts. He joined the faculty of the University of Michigan in 2005. His research interest includes highdensity memory based on two-terminal resistive switches (RRAM), memristor-based neuromorphic circuits, aggressively scaled nanowire transistors, and electrical transport in low-dimensional systems. To date Prof. Lu has published over 80 journal papers with over 12,000 citations. Prof. Lu is an associate editor for Nanoscale, and a member of the International Technology Roadmap for Semiconductors (ITRS). Crossbar Inc., founded in 2010, is a startup company based in Silicon Valley developing and commercializing RRAM technologies. Crossbar Inc. currently has over 50 employees and has received $85M VC funding to date.

Biography

Mario Lanza is a Young 1000 Talent professor at the Institute of Functional Nano & Soft Materials of Soochow University, the fastest growing university in the world in 2015-2016 according to Nature Index. Dr. Lanza got his PhD in Electronics in 2010 at Universitat Autonoma de Barcelona. During the PhD he was a visiting scholar at The University of Manchester (UK) and Infineon Technologies (Germany). In 2010-2011 he did a postdoc at Peking University, and in 2012-2013 he was a Marie Curie fellow at Stanford University. Dr. Lanza has published over 55 papers, including Science and Advanced Materials, edited an entire book for Wiley-VCH and registered four patents. He is member of the advisory board of Scientific Reports (Nature) and Crystal Research and Technology (Wiley-VCH), as well member of the technical committee of several international conferences. His research interests focus on the improvement of electronic devices using 2D materials, with special emphasis on 2D (layered) dielectrics and logic memory devices.

Biography

Dr. Deji Akinwande received the PhD degree in Electrical Engineering from Stanford University in 2009, where he conducted research on the synthesis, device physics, and circuit applications of carbon nanotubes and graphene. He is an Endowed Faculty Fellow and Associate Professor at the University of Texas at Austin. Prof. Akinwande has been honored with the 2016 Presidential PECASE award, the inaugural Gordon Moore Inventor Fellow award, the inaugural IEEE Nano Geim and Novoselov Graphene Prize, the IEEE 'Early Career Award' in Nanotechnology, the NSF CAREER award, several DoD Young Investigator awards, the 3M Nontenured Faculty Award, and was a past recipient of fellowships from the Kilby/TI, Ford Foundation, Alfred P. Sloan Foundation, and Stanford DARE Initiative. His recent results on silicene have been featured by nature news, Time magazine and was selected among the top 2015 science stories by Discover magazine. His work on flexible 2D electronics was highlighted among the 'best of 2012' by the nanotechweb news portal and has been featured on MIT's technology review and other technical media outlets. He is a distinguished lecturer of the IEEE Electron Device Society and an Editor for the IEEE Electron Device Letters and Nature NPJ 2D Materials and Applications. He co-authored a textbook on carbon nanotubes and graphene device physics by Cambridge University Press, 2011, and was recently a finalist for the Regents' Outstanding Teaching Award, the highest university teaching award in Texas.

Biography

Dr. Wu is presently the deputy director of the Institute of Microelectronics, Tsinghua University, Beijing, China. Dr. Wu is also served as the deputy director of Beijing Innovation Center for Future Chip (ICFC). Dr. Wu received his Ph.D. degree in electrical engineering from Cornell University, Ithaca, NY, in 2005. Prior to that, he graduated from Tsinghua University, Beijing, China, in 2000 with double B.S. degrees in material science & engineering and enterprise management. From 2006 to 2008, he was a senior engineer in Spansion LLC, Sunnyvale, CA. He joined the Institute of Microelectronics, Tsinghua University in 2009 as an associate professor. His research interests include advanced memory and low dimensional nanomaterial and devices. Dr. Wu has published more than 90 technical papers and owns more than 40 patents.

Biography

Tony Kenyon is currently the Vice Dean (Research) for the Faculty of Engineering Sciences and Professor of Nanoelectronic & Nanophotonic Materials in the Department of Electronic & Electrical Engineering. His research interests include resistance switching; RRAM; neuromorphic devices; nanostructured materials for electronics and photonics; silicon photonics, and self-assembled nanoscale systems. Professor Kenyon is a Fellow of both the Institute of Physics and the IET, a Senior Member of the IEEE, a member of the EPSRC ICT Strategic Advisory Team, and serves on the Executive Committee of the European Materials Research Society. He is the author of more than 90 peer-reviewed publications, and sits on the editorial board of several journals. He regularly gives invited talks at major international meetings, and has co-organised a number of international symposia. Tony is working closely with UCL Business to commercialise his resistance switching research, and is currently setting up a spin-out company (Intrinsic Semiconductor Technology) to develop novel RRAM devices and applications. Tony received a BSc and D.Phil in Chemical Physics from the University of Sussex, Brighton, UK in 1986 and 1992, respectively, and joined UCL shortly afterwards. He was promoted to a Chair in Nanoelectronic & Nanophotonic Materials in 2014.

Biography

Kin-Leong Pey is currently the Associate Provost (Education) and a Professor at the Singapore University of Technology and Design. Kin-Leong was appointed by the Singapore Ministry of Education to take up the current SUTD position in 2010. He was previously the Head of the Microelectronics Division, Director of the Nanyang NanoFabrication Center and Director of the Microelectronic Centre in the School of EEE at the Nanyang Technological University. A senior member of IEEE and an IEEE Electron Devices Society Distinguished Lecturer, Kin-Leong was the General Chair of IPFA2001, Singapore and the co-General Chair of IPFA2004, Taiwan. Kin Leong is a Fellow of the ASEAN Academy of Engineering & Technology. He is an Editor of IEEE Transactions on Devices and Materials Reliability. Kin-Leong has published more than 170 international refereed publications, 175 technical papers at international meetings or conferences and 3 book chapters, and holds 38 US patents. Kin-Leong has graduated 30 PhD and more than 15 Master theses.

Biography

Luca Larcher graduated in Electronic Engineering from the University of Padova, Italy, in 1998. In 2001 he was appointed Assistant Professor at the University of Modena and Reggio Emilia, where he is currently Associate Professor of Electronics since the 1^st of November 2005. He received his Ph.D. degree in “Information Engineering” from the University of Modena and Reggio Emilia in 2002. He has taught courses covering basic electronics concepts, advanced device and circuit applications, including communication and audio. In the audio field, he is the organizer and the director of the short masters entitled “Sound engineering.” He supervised 8 PhD and 21 Master thesis. His research interests cover three main areas: The first area covers the modeling and characterization of non-volatile memory devices and of physical mechanisms governing the charge transport and degradation in high-k dielectrics. In this area, he has worked on both standard Floating Gate (FG) Flash memory devices (he developed Spice-like compact model and investigated also the ionizing radiation effects on Flash memories), and innovative NVM technologies such as charge trapping memory devices (NROM, SONOS, nanocrystals), PCM and recently resistive-RAM. The second area of research is on the characterization and design of integrated circuits for both communications and energy harvesting applications in CMOS technology. In particular, he has worked mainly on power amplifiers, obtaining circuit solutions with record efficiency and reliability, and on power converter for harvesting energy from ambient energy sources (e.g. solar energy, vibrations and electromagnetic field). The third area of research is dedicated to the research dedicated to the development of advanced audio systems. In this area, he is currently working toward the design of power amplifier using GaN technology, the development of wireless microphones to be used in ANC (Active Noise Compensation) systems, and the development of digital microphones. He has joined and leaded research projects in collaboration with international research centres (CEA-LETI, IMEC, TYNDALL, SEMATECH, POSTECH) and companies (RCF, FBT, ASK, STM, MDLab, COBO, DIECI) supported by regional, national and European programs (ENIAC Mirandela, ENIAC END, NoE Nanofuction, IP GOSSAMER, ISOTRACTOR, ENIAC LAB2MEMS 2). In 2013 he co-founded a company, MDLab, developing and marketing simulation software for electronic devices. He authored and co-authored a book and a chapter in a book, and more than 190 technical papers published on international journals and proceedings of international conferences. He has joined the technical and executives committees of the IEEE-IEDM (2006-2007, 2013-2015), IEEE-IRPS (2011-2012) and IIRW (2013-2015) conferences. He has received more than 3400 citations and H-factor is 31.

Biography

Prof. Dr. Run-Wei Li is the director of Key Laboratory of Magnetic Materials and Devices, Chinese Academy of Sciences (CAS), and deputy director of Ningbo Institute of Materials Technology and Engineering (NIMTE), CAS. He obtained his Ph.D. degree from Institute of Physics (IOP), CAS in 2002, then worked in Osaka University, Japan as a JSPS (Japan Society for the Promotion of Science) research fellow, and in Kaiserslautern University, Germany as an AvH (Alexander von Humboldt) research fellow. In 2005, he joined in the International Center for Young Scientists, National Institute for Materials Sciences, Japan as a senior research fellow. He joined in NIMTE as a full professor in 2008, and was promoted to be the deputy director of NIMTE in 2013. Now his research interests focus on flexible functional materials and devices for storage and sensors. He has filed more than 70 patents and published more than 180 papers in peer-reviewed journals. He serves as a referee for over 50 international journals such as: Nat. Nanotech., Nat. Commun., Adv. Mater.and etc.

Biography

Jordi Suñé is professor of electronics at the Universitat Autònoma de Barcelona (UAB) since 2002. IEEE Fellow since 2010 for contributions to the understanding gate oxide breakdown and the development of reliability methodologies. Focusing on the modeling and simulation of electron devices with a multi-scale approach, he has coordinated the NANOCOMP UAB research group for the past 15 years. Recently, he has organized NEUROMORPHICS a multi-disciplinary research group dedicated to the application of neuromorphic electronics towards improved understanding of the human brain processes at multiple scales, to development of alternative computing paradigms based on biomimetic circuits and to their applications to mental health issues. He has (co)authored more than 400 papers, among which 14 IEDM papers, several invited papers and five tutorials on oxide reliability at the IEEE-IRPS (from 2001 to 2009). In 2008 he was honored with the IBM Faculty award, recognizing a fruitful long lasting research collaboration with IBM Microelectronics. In 2010 he received the ICREA ACADEMIA award from the Generalitat de Catalunya. In 2012 and 2013, he was awarded the Chinese Academy of Sciences Professorship for Senior International Scientists for a joint project with the Institute of Microelectronics (IMECAS) on Resistive RAM. His present research interests are: transition metal oxide-based memristors, complex perovskite oxide based memristors, biorealistic compact modeling of memristors for neuromorphic applications, RRAM characterization and modelling, applications of graphene and two-dimensional (2D) materials for resistive switching applications, investigation of the human brain by biomimetic electric-circuit simulation (SPICE) and analog circuits based on the combination of CMOS and memristors.

Biography

Hyunsang Hwang is a professor in Pohang University of Science and Technology, department of Materials science and Engineering. In 1992, he graduated in Materials Science and Engineering from University of Texas at Austin. He worked as Principal Research Engineer, LG Semiconductor Company, Korea from 1992 to 1997. In 1997 he was appointed as a professor in Dept. of MSE, GIST, during this period, he worked as Visiting Research Professor in Department of Electrical Engineering in Stanford University, USA（2007~2008）and Oak Ridge National Lab., USA in 2002. In 2012 he leaved for Department of MSE in POSTECH as a professor. Until now, he has cultivated 23 Ph.D and 54 Master students, and 14 of them got the best student paper awards. He is author of about 330 journal papers and inventor of 55 international patents. During his career he has given 35 invited presentations, plenary talks and tutorial lectures. He is a Senior Member of IEEE Electron Device Society. He has been member of committees on important conferences such as IEEE International Electron Device Meeting (Memory Technology Program committee 2009, 2010), IEEE Semiconductor Interface Specialists Conf., (Technical Program Committee 2008, 2009, 2010) and International Conf. on Solid State Devices and Materials (program committee 2005-2008, 2011-2014). He also served as Technical Program Co-chair (2012) and Technical Program Vice-chair (2011) of Korean Conference on Semiconductors (KCS) and Chair of Thin Film committee (2009-2011).

Biography

Hakim Meskine studied solid state physics at university in Morocco and obtained his PhD in Computational Condensed Matter from the University of Missouri, Columbia in the US in 2005. He completed a post-doc at the Fritz-Haber-Institut der Max-Planck Gesellschaft, Berlin in 2007 where he worked on modelling catalysis using a combination of first-principles calculations and kinetic Monte-Carlo. He also completed a second post-doc in 2010 at the Department of Process and Chemical Engineering at Strathclyde University in Glasgow, Scotland. He then returned to Berlin and began working for Wiley in 2011 as an assistant editor for physica status solidi. He soon after took over the duties of Managing Editor of Crystal Research and Technology and became editor for Laser and Photonic Reviews, Annalen der Physik and later for Advanced Functional Materials. In all these journals, he worked as a peer-review editor where he helped oversee the management of peer-review for submitted and commissioned manuscripts. He is also occasionally invited to give talks on peer-review or publishing-related topics and often travel to scientific conferences as part of my duty to stay abreast of the science published in journals I oversee.In 2013, he successfully helped launch Advanced Materials Interfaces and took over as editor of Advanced Electronic Materials in 2014 as well as joined the editorial teams of Advanced Materials and Advanced Science. Since 2016, he serves as a Deputy Editor for Advanced Functional materials and retains his editorial responsibilities in Advanced Electronic Materials, Advanced Science and Crystal Research and Technology.

Biography

Jinfeng Kang, received his B.S. degree in physics from Dalian University of Technology in 1984, and M.S. and Ph.D degrees in solid-state electronics from Peking University in 1992 and 1995 respectively. Now he is Full Professor of Electronics Engineering Computer Science School, Peking University and Editor of IEEE Transactions on Electron Devices. His main research interests include nano devices and materials for computing and data storage. He has published over 300 conference and journal papers in such as IEDM, VLSI, IEEE EDL and TED, Adv. Mat., ACS Nano. He was speaker of 20+ invited talks to international conferences, societies, academia, and industry including IEDM, ESSDERC, MRS, SSDM, ASP-DAC.

Biography

Weidong Zhang received the Ph.D. degree from Liverpool John Moores University (LJMU), U.K., in 2003. He is currently a professor of nanoelectronics and the leader of the research of memory devices at LJMU. He has led the LJMU’s collaboration with IMEC’s memory device group for the past 10 years. He is the principal investigator and co-investigator of a number of research projects with a total value of more than £2.5 million. His current research interests include characterization and quality assessment of resistive switching and flash memory devices, CMOS devices based on Si, Ge and III-V materials, and GaN HEMT devices. All of his research outputs are regarded as international excellence by UK government’s Research Excellence Framework (REF) Exercise. The impact of his research is considered ‘significant and on a global scale’ by managers of leading industrial companies, and as ‘an exemplar in terms of the impact of university research on industry’. His work is predominantly published in journals with high ISI impact factors and premier international conferences, including Applied Physics Letters, IEEE Electron Device Letters, IEEE Transactions on Electron Devices. He has co-authored 9 papers in the flagship IEEE International Electron Device Meeting (IEDM), and 6 papers in IEEE Symposium on VLSI Technology (VLSI).

Biography

Gabriele Navarro received the Master degree in microelectronic engineering in 2007 and the Laurea degree in Physics in 2009 from the University of Padova (Italy). In 2013, he received the Ph.D. degree in Nanoelectronics from the Polytechnic Institute of Grenoble (France), with a work on the reliability analysis of embedded phase-change memories based on innovative materials. In 2014 he joined the Memory Devices Laboratory of CEA-LETI in Grenoble (France), and his research activities mainly involve the development, the fabrication and the characterization of innovative NVMs. His recent work focused on the reliability improvement of the Phase-Change Memory technology, for both embedded and storage class applications. He is author/coauthor of more than 30 papers published in international journals and presented in international conferences.

Biography

Yuchao Yang received Ph.D. degree from Tsinghua University, Beijing, China in 2010. After that he joined University of Michigan, Ann Arbor, MI, USA as a postdoctoral Research Fellow and was promoted to Senior Research Fellow in 2013. He is now an Assistant Professor in Institute of Microelectronics, Peking University, Beijing, China. He was a recipient of the '1000 Youth Talents Program' funded by the Chinese government. His research interests span from memristive devices, neuromorphic computing to advanced material characterization techniques. He has published over 40 papers in high-profile journals such as Nature Communications, Advanced Materials, Nano Letters as well as 2 book chapters. His papers have been cited over 2200 times, with an h-index of 22. Prof. Yang is a member of IEEE, MRS, RSC and ACS.

Biography

Francesco Maria Puglisi (S’12, M’15) received the Ph.D. degree in Information and Communication Technology in 2015 from University of Modena and Reggio Emilia, Italy, where he is currently a Research Associate and Adjunct Professor. His research activity focuses on the electrical characterization, physical and compact modeling of novel transistors and nonvolatile memories, especially RRAM. Particularly, he is interested in variability, noise issues (especially Random Telegraph Noise), and reliability aspects. Dr. Puglisi is an IEEE member and authored/co-authored more than 40 technical paper. He currently serves in the Technical Program Committee of IEEE IRPS, IEEE IPFA, and ChinaRRAM. He is the recipient of the Best Student Paper Award at the IEEE ICICDT 2013 Conference, 29-31 May 2013, Pavia, Italy.

Biography

Ernest Y. Wu is a senior technical staff member at IBM Research Division and has been responsible for technology qualification and development of dielectric reliability methodologies since 1995 for many generations of CMOS technologies from 250nm to 7nm nodes including SiO₂, high-k, and low-k dielectrics across FEOL/MOL/BEOL applications. He has authored and co-authored more than 150 papers in technical journals and international conferences with numerous invited papers and tutorials including 16 IEDM papers. Dr. Wu has served as a committee chair on the device dielectric committee for 2007 and 2015 IRPS, respectively. He is a member of IEDM Reliability subcommittee during 1999-2000 and 2013-2014. In 2004, he received IBM Outstanding Technical Achievement Award for the original work on power-law acceleration model which has been adopted in JEDEC and reliability and widely used in gate dielectric reliability qualification. In 2016, he received two IBM Outstanding Technical Achievement Awards for his contribution to statistics and physics of dielectric breakdown and development of high-k/metal gate technology for high performance CMOS technologies, respectively. In 2016, he was elevated to IEEE Fellow for the contributions to the understanding gate oxide breakdown and methodology development. His research interests include statistics, dielectric reliability physics, device physics and simulation.